Pt/Ti/SiO2/Si substrates

Pt/Ti/SiO2/Si structures have been studied to investigate the structural, chemical, and microstructural changes that occur during annealing. Grain growth of the as-deposited Pt columns was observed after annealing at 650 °C, and extensive changes in the Pt microstructure were apparent following a 750 °C anneal for 20 min. In addition, two types of defects were identified on the surfaces of annealed substrates. Defect formation was retarded when the surface was covered with a ferroelectric film. Concurrent with the annealing-induced Pt microstructure changes, Ti from the adhesion layer between the Pt and the SiO2 migrated into the Pt layer and oxidized. It was shown with spectroscopic ellipsometry and Auger electron spectroscopy that for long annealing times, the titanium oxide layer can reach the Pt surface. Consequently, at the processing temperatures utilized in preparing many ferroelectric thin films, the substrate is not completely inert or immobile. The changes associated with Ti migration could be especially problematic in techniques that require the substrate to be heated prior to film depositio

Microstructure Evolution of In Situ Pulsed-Laser Crystallized Pb(Zr0.52Ti0.48)O3 Thin Films

Integration of lead zirconate titanate (PZT) films with temperature-sensitive substrates (CMOS, polymers) would benefit from growth at substrate temperatures below 400°C. In this work, in situ pulsed-laser annealing [Rajashekhar et al. (2013) Appl. Phys. Lett., 103 [3] 032908] was used to grow crystalline lead zirconate titanate (PbZr0.52Ti0.48O3) thin films at a substrate temperature of ~370°C on PbZr0.30Ti0.70O3-buffered platinized silicon substrates. Transmission electron microscopy analysis indicated that the films were well crystallized into columnar grains, but with pores segregated at the grain boundaries. Lateral densification of the grain columns was significantly improved by reducing the partial pressure of oxygen from 120 to 50 mTorr, presumably due to enhanced adatom mobility at the surface accompanying increased bombardment. It was found that varying the fractional annealing duration with respect to the deposition duration produced little effect on lateral grain growth. However, increasing the fractional annealing duration led to shift of 111 PZT X-ray diffraction peaks to higher 2θ values, suggesting residual in-plane tensile stresses in the films. Thermal simulations were used to understand the annealing process. Evolution of the film microstructure is described in terms of transient heating from the pulsed laser determining the nucleation events, while the energy of the arriving species dictates grain growth/coarsening

Pyroelectric response of lead zirconate titanate thin films on silicon: Effect of thermal stresses

Ferroelectric lead zirconate titanate [Pb(ZrxTi1-xO)(3), (PZT x:1-x)] has received considerable interest for applications related to uncooled infrared devices due to its large pyroelectric figures of merit near room temperature, and the fact that such devices are inherently ac coupled, allowing for simplified image post processing. For ferroelectric films made by industry-standard deposition techniques, stresses develop in the PZT layer upon cooling from the processing/growth temperature due to thermal mismatch between the film and the substrate. In this study, we use a non-linear thermodynamic model to investigate the pyroelectric properties of polycrystalline PZT thin films for five different compositions (PZT 40:60, PZT 30:70, PZT 20:80, PZT 10:90, PZT 0:100) on silicon as a function of processing temperature (25-800 degrees C). It is shown that the in-plane thermal stresses in PZT thin films alter the out-of-plane polarization and the ferroelectric phase transformation temperature, with profound effect on the pyroelectric properties. PZT 30:70 is found to have the largest pyroelectric coefficient (0.042 mu C cm(-2)degrees C-1, comparable to bulk values) at a growth temperature of 550 degrees C; typical to what is currently used for many deposition processes. Our results indicate that it is possible to optimize the pyroelectric response of PZT thin films by adjusting the Ti composition and the processing temperature, thereby, enabling the tailoring of material properties for optimization relative to a specific deposition process. (C) 2013 AIP Publishing LLC

Coherent Growth of a-Fe2O3 in Ti and Nd Co-doped BiFeO3 Thin Films

Coherent dendritic α-Fe2O3 precipitates were observed to form at the surface of epitaxial films of (Bi0.75Nd0.25)(Fe0.97Ti0.03)O3 (BNFO) grown by pulsed laser deposition. The Fe2O3 dendrites are assemblages of nanosized particles with an approximate length of 500 nm. Through the use of atomic resolution scanning transmission electron microscopy, a transition zone at the BNFO/α- Fe2O3 interface, ∼ 2 unit-cells wide, was observed to be Fe2O3-rich with the perovskite structure. It is proposed that the formation of the Fe2O3-rich perovskite structure encourages epitaxial growth of the α-Fe2O3 rather than the formation of the incoherent Fe2O3 particulate second phase frequently reported in BiFeO3-based thin films

Progress Towards a Multi-Modal Capsule Endoscopy Device Featuring Microultrasound Imaging

Current clinical standards for endoscopy in the gastrointestinal (GI) tract combine high definition optics and ultrasound imaging to view the lumen superficially and through its thickness. However, these instruments are limited to the length of an endoscope and the only clinically available, autonomous devices able to travel the full length of the GI tract easily offer only video capsule endoscopy (VCE). Our work seeks to overcome this limitation with a device (“Sonopill”) for multimodal capsule endoscopy, providing optical and microultrasound (μUS) imaging and supporting sensors1. μUS transducers have been developed with multiple piezoelectric materials operating across a range of centre frequencies to study viability in the GI tract. Because of the combined constraints of μUS imaging and the low power / heat tolerance of autonomous devices, a hybrid approach has been taken to the transducer design, with separate transmit and receive arrays allowing multiple manufacturing approaches to maximise system efficiency. To explore these approaches fully, prototype devices have been developed with PVDF, high-frequency PZT and PMN-PT composites, and piezoelectric micromachined ultrasonic transducer arrays. Test capsules have been developed using 3D printing to investigate issues including power consumption, heat generation / dissipation, acoustic coupling, signal strength and capsule integrity. Because of the high functional density of the electronics in our proposed system, application specific integrated circuits (ASICs) have been developed to realise the ultrasound transmit and receive circuitry along with white-light and autofluorescence imaging with single-photon avalanche detectors (SPADs). The ultrasound ASIC has been developed and the SPAD electronics and optical subsystem have been validated experimentally. The functionality of various transducer materials has been examined as a function of frequency and ultrasound transducers have been developed to operate at centre frequencies in the range 15 - 50 MHz. Ex vivo testing of porcine tissue has been performed, generating images of interest to the clinical community, demonstrating the viability of the Sonopill concept

Multi-Channel Signal Generator ASIC for Acoustic Holograms

A CMOS application-specific integrated circuit (ASIC) has been developed to generate arbitrary, dynamic phase patterns for acoustic hologram applications. An experimental prototype has been fabricated to demonstrate phase shaping. It comprises a cascadable 1 × 9 array of identical, independently-controlled signal generators implemented in a 0.35 μ m minimum feature size process. It can individually control the phase of a square wave on each of the nine output pads. The footprint of the integrated circuit is 1175 × 88 μ m2. A 128 MHz clock frequency is used to produce outputs at 8 MHz with phase resolution of 16 levels (4-bit) per channel. A 6 × 6 air-coupled matrix array ultrasonic transducer was built and driven by four ASICs, with the help of commercial buffer amplifiers, for the application demonstration. Acoustic pressure mapping and particle manipulation were performed. Additionally, a 2 × 2 array piezoelectric micromachined ultrasonic transducer (PMUT) was connected and driven by four output channels of a single ASIC, demonstrating the flexibility of the ASIC to work with different transducers and the potential for direct integration of CMOS and PMUTs

The effect of substrate clamping on the paraelectric to antiferroelectric phase transition in Nd-doped BiFeO₃ thin films

Thin films were deposited on Pt/Ti/SiO₂/Si substrates using pulsed laser deposition from a target with a composition (Bi₀.₈₂₅Nd₀.₁₇₅Fe₀.₉₇Ti₀.₀₃O₃) with 5 mol% excess Bi₂O₃ within the antiferroelectric (AFE) region of the NdFeO₃-BiFeO₃ phase diagram. However, Raman spectroscopy and transmission electron microscopy (TEM) revealed that films consisted of a mosaic microstructure in which (AFE), ferroelectric (FE) and paraelectric (PE) phases coexisted. Variation in the spatial distribution of Nd is typically greater in bulk ceramics than in thin films and therefore, the absence of single phase AFE cannot be attributed to local changes in composition. Instead, it is proposed that clamping due to mismatch in thermal expansion coefficient with the substrate suppresses the large volume change associated with the PE-FE and PE-AFE transition in bulk and its absence in the thin film prevents an avalanche-like transition throughout grains, which in bulk sustains single phase AFE, irrespective of local deviations in the Nd concentration

Pathway to the PiezoElectronic Transduction Logic Device

The information age challenges computer technology to process an exponentially increasing computational load on a limited energy budget - a requirement that demands an exponential reduction in energy per operation. In digital logic circuits, the switching energy of present FET devices is intimately connected with the switching voltage, and can no longer be lowered sufficiently, limiting the ability of current technology to address the challenge. Quantum computing offers a leap forward in capability, but a clear advantage requires algorithms presently developed for only a small set of applications. Therefore, a new, general purpose, classical technology based on a different paradigm is needed to meet the ever increasing demand for data processing.Comment: in Nano Letters (2015

High-resolution x-ray telescopes

High-energy astrophysics is a relatively young scientific field, made possible by space-borne telescopes. During the half-century history of x-ray astronomy, the sensitivity of focusing x-ray telescopes-through finer angular resolution and increased effective area-has improved by a factor of a 100 million. This technological advance has enabled numerous exciting discoveries and increasingly detailed study of the high-energy universe-including accreting (stellar-mass and super-massive) black holes, accreting and isolated neutron stars, pulsar-wind nebulae, shocked plasma in supernova remnants, and hot thermal plasma in clusters of galaxies. As the largest structures in the universe, galaxy clusters constitute a unique laboratory for measuring the gravitational effects of dark matter and of dark energy. Here, we review the history of high-resolution x-ray telescopes and highlight some of the scientific results enabled by these telescopes. Next, we describe the planned next-generation x-ray-astronomy facility-the International X-ray Observatory (IXO). We conclude with an overview of a concept for the next next-generation facility-Generation X. The scientific objectives of such a mission will require very large areas (about 10000 m2) of highly-nested lightweight grazing-incidence mirrors with exceptional (about 0.1-arcsecond) angular resolution. Achieving this angular resolution with lightweight mirrors will likely require on-orbit adjustment of alignment and figure.Comment: 19 pages, 11 figures, SPIE Conference 7803 "Adaptive X-ray Optics", part of SPIE Optics+Photonics 2010, San Diego CA, 2010 August 2-